Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 860-864
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3—6nm超薄SiO_2栅介质的特性

高文钰 , 张兴 , 田大宇 , 张大成 and 王阳元

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Key words: 超薄栅介质, 软击穿, 完整性, 漏电流

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 860-864
      高文钰, 张兴, 田大宇, 张大成, 王阳元. 3—6nm超薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 860-864.
      Citation:
      高文钰, 张兴, 田大宇, 张大成, 王阳元. 3—6nm超薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 860-864.
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      • Received Date: 2015-08-20

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