Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 865-870
|

CONTENTS

CeO_2高K栅介质薄膜的制备工艺及其电学性质

康晋锋 , 刘晓彦 , 王玮 , 俞挺 , 韩汝琦 , 连贵君 , 张朝晖 and 熊光成

+ Author Affiliations

PDF

Key words: 高K栅介质, CeO2薄膜, Si表面/界面氮化, 电学性质

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2443 Times PDF downloads: 831 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 865-870
      康晋锋, 刘晓彦, 王玮, 俞挺, 韩汝琦, 连贵君, 张朝晖, 熊光成. CeO_2高K栅介质薄膜的制备工艺及其电学性质[J]. 半导体学报(英文版), 2001, 22(7): 865-870.
      Citation:
      康晋锋, 刘晓彦, 王玮, 俞挺, 韩汝琦, 连贵君, 张朝晖, 熊光成. CeO_2高K栅介质薄膜的制备工艺及其电学性质[J]. 半导体学报(英文版), 2001, 22(7): 865-870.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return