Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 800-805
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2.5—10Gb/s光发射机驱动电路HEMT IC中器件模型参数

高建军 , 高葆新 and 吴德馨

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Key words: 高速光集成电路, 光发射机, 驱动电路, HEMT器件模型参数

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 800-805
      高建军, 高葆新, 吴德馨. 2.5—10Gb/s光发射机驱动电路HEMT IC中器件模型参数[J]. 半导体学报(英文版), 2001, 22(6): 800-805.
      Citation:
      高建军, 高葆新, 吴德馨. 2.5—10Gb/s光发射机驱动电路HEMT IC中器件模型参数[J]. 半导体学报(英文版), 2001, 22(6): 800-805.
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      • Received Date: 2015-08-20

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