Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 806-810
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部分耗尽CMOS/SOI工艺

刘新宇 , 孙海峰 , 陈焕章 , 扈焕章 , 海潮和 , 刘忠立 , 和致经 and 吴德馨

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Key words: PBL, 沟道工程, 双层布线

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 806-810
      刘新宇, 孙海峰, 陈焕章, 扈焕章, 海潮和, 刘忠立, 和致经, 吴德馨. 部分耗尽CMOS/SOI工艺[J]. 半导体学报(英文版), 2001, 22(6): 806-810.
      Citation:
      刘新宇, 孙海峰, 陈焕章, 扈焕章, 海潮和, 刘忠立, 和致经, 吴德馨. 部分耗尽CMOS/SOI工艺[J]. 半导体学报(英文版), 2001, 22(6): 806-810.
      shu

      • Received Date: 2015-08-20

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