Chin. J. Semicond. > 2003, Volume 24 > Issue 12 > 1261-1265
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新型薄膜SOI高压MOSFET的研制(英文)

李文宏 and 罗晋生

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Key words: 绝缘体上硅, 金属氧化物半导体场效应晶体管, 高压器件

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(12): 1261-1265
      李文宏, 罗晋生. 新型薄膜SOI高压MOSFET的研制(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1261-1265.
      Citation:
      李文宏, 罗晋生. 新型薄膜SOI高压MOSFET的研制(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1261-1265.
      shu

      • Received Date: 2015-08-20

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