Chin. J. Semicond. > 2003, Volume 24 > Issue 12 > 1255-1260
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Vg=Vd/2)应力模式下宽度变窄对HALO-pMOSFETs退化的影响(英文)

胡靖 , 赵要 , 许铭真 and 谭长华

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Key words: 宽度增强退化, 尖断电压, 电流拥挤效应

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(12): 1255-1260
      胡靖, 赵要, 许铭真, 谭长华. Vg=Vd/2)应力模式下宽度变窄对HALO-pMOSFETs退化的影响(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1255-1260.
      Citation:
      胡靖, 赵要, 许铭真, 谭长华. Vg=Vd/2)应力模式下宽度变窄对HALO-pMOSFETs退化的影响(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1255-1260.
      shu

      • Received Date: 2015-08-20

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