Chin. J. Semicond. > 1991, Volume 12 > Issue 8 > 477-481
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GaAs/GaAlAs反应离子刻蚀腔面激光器

庄婉如 , 杨培生 , 陈纪瑛 and 李建中

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(8): 477-481
      庄婉如, 杨培生, 陈纪瑛, 李建中. GaAs/GaAlAs反应离子刻蚀腔面激光器[J]. 半导体学报(英文版), 1991, 12(8): 477-481.
      Citation:
      庄婉如, 杨培生, 陈纪瑛, 李建中. GaAs/GaAlAs反应离子刻蚀腔面激光器[J]. 半导体学报(英文版), 1991, 12(8): 477-481.
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      • Received Date: 2015-08-19

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