Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1041-1047

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采用ECR-PEMOCVD方法进行立方和六方GaN单晶薄膜生长的准热力学模型和相图(英文)

王三胜 and 顾彪

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Key words: GaN, ECR-PEMOCVD, 热力学分析, 生长相图

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1041-1047
      王三胜, 顾彪. 采用ECR-PEMOCVD方法进行立方和六方GaN单晶薄膜生长的准热力学模型和相图(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1041-1047.
      Citation:
      王三胜, 顾彪. 采用ECR-PEMOCVD方法进行立方和六方GaN单晶薄膜生长的准热力学模型和相图(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1041-1047.
      shu

      • Received Date: 2015-08-19

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