Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1048-1054
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低能量He离子注入局域寿命控制LIGBT的实验研究(英文)

方健 , 唐新伟 , 李肇基 and 张波

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Key words: LIGBT, 局域寿命控制, He离子注入

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1048-1054
      方健, 唐新伟, 李肇基, 张波. 低能量He离子注入局域寿命控制LIGBT的实验研究(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1048-1054.
      Citation:
      方健, 唐新伟, 李肇基, 张波. 低能量He离子注入局域寿命控制LIGBT的实验研究(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1048-1054.
      shu

      • Received Date: 2015-08-19

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