Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1079-1083
|

CONTENTS

离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)

徐云 , 曹青 , 孙永伟 , 叶晓军 , 侯识华 , 郭良 and 陈良惠

+ Author Affiliations

PDF

Key words: AlGaInP可见光激光器, Ar离子束干法刻蚀

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2274 Times PDF downloads: 1719 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1079-1083
      徐云, 曹青, 孙永伟, 叶晓军, 侯识华, 郭良, 陈良惠. 离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1079-1083.
      Citation:
      徐云, 曹青, 孙永伟, 叶晓军, 侯识华, 郭良, 陈良惠. 离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1079-1083.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return