Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1084-1090
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亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述(英文)

于春利 , 杨林安 and 郝跃

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Key words: 轻掺杂漏MOSFET, 衬底电流, 特征长度, 最大横向电场

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1084-1090
      于春利, 杨林安, 郝跃. 亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1084-1090.
      Citation:
      于春利, 杨林安, 郝跃. 亚微米、深亚微米LDD MOSFET的衬底电流模型中特征长度改进的描述(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1084-1090.
      shu

      • Received Date: 2015-08-19

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