Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 779-783
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环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响

何宝平 , 姚育娟 , 彭宏论 and 张正选

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Key words: 温度, 剂量率, 总剂量, 退火

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 779-783
      何宝平, 姚育娟, 彭宏论, 张正选. 环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响[J]. 半导体学报(英文版), 2001, 22(6): 779-783.
      Citation:
      何宝平, 姚育娟, 彭宏论, 张正选. 环境温度、电离辐射剂量率对NMOSFET器件特性参数的影响[J]. 半导体学报(英文版), 2001, 22(6): 779-783.
      shu

      • Received Date: 2015-08-20

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