Chin. J. Semicond. > 1997, Volume 18 > Issue 8 > 581-586
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Si(1-x)Ge_x外延层结构参数的椭偏光谱表征技术研究

张瑞智 and 罗晋生

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(8): 581-586
      张瑞智, 罗晋生. Si(1-x)Ge_x外延层结构参数的椭偏光谱表征技术研究[J]. 半导体学报(英文版), 1997, 18(8): 581-586.
      Citation:
      张瑞智, 罗晋生. Si(1-x)Ge_x外延层结构参数的椭偏光谱表征技术研究[J]. 半导体学报(英文版), 1997, 18(8): 581-586.
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      • Received Date: 2015-08-19

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