Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 840-843
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使用金刚石膜热沉的半导体激光器特性研究

顾长志 , 金曾孙 , 吕宪义 , 邹广田 , 屠玉珍 and 方祖捷

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 840-843
      顾长志, 金曾孙, 吕宪义, 邹广田, 屠玉珍, 方祖捷. 使用金刚石膜热沉的半导体激光器特性研究[J]. 半导体学报(英文版), 1997, 18(11): 840-843.
      Citation:
      顾长志, 金曾孙, 吕宪义, 邹广田, 屠玉珍, 方祖捷. 使用金刚石膜热沉的半导体激光器特性研究[J]. 半导体学报(英文版), 1997, 18(11): 840-843.
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      • Received Date: 2015-08-19

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