Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 746-750
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化学计量比的偏离对GaN的结晶品质及光电性能的影响

江风益 , 姚冬敏 , 莫春兰 , 王立 , 李鹏 , 熊传兵 and 彭学新

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Key words: GaN, X射线光电子能谱, RBS/沟道, 光致发光, Hall测量

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 746-750
      江风益, 姚冬敏, 莫春兰, 王立, 李鹏, 熊传兵, 彭学新. 化学计量比的偏离对GaN的结晶品质及光电性能的影响[J]. 半导体学报(英文版), 2001, 22(6): 746-750.
      Citation:
      江风益, 姚冬敏, 莫春兰, 王立, 李鹏, 熊传兵, 彭学新. 化学计量比的偏离对GaN的结晶品质及光电性能的影响[J]. 半导体学报(英文版), 2001, 22(6): 746-750.
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      • Received Date: 2015-08-20

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