Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 751-754
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硅熔体中3C-SiC的生长及6H-SiC晶型的抑制

马剑平 , 卢刚 , 雷天民 and 陈治明

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Key words: 硅, 熔体, 碳化硅, 抑制

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 751-754
      马剑平, 卢刚, 雷天民, 陈治明. 硅熔体中3C-SiC的生长及6H-SiC晶型的抑制[J]. 半导体学报(英文版), 2001, 22(6): 751-754.
      Citation:
      马剑平, 卢刚, 雷天民, 陈治明. 硅熔体中3C-SiC的生长及6H-SiC晶型的抑制[J]. 半导体学报(英文版), 2001, 22(6): 751-754.
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      • Received Date: 2015-08-20

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