Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 755-759
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N型6H-SiCMOS电容的电学特性

王姝睿 , 刘忠立 , 梁桂荣 , 梁秀芹 and 马红芝

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Key words: 碳化硅, MOS电容

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 755-759
      王姝睿, 刘忠立, 梁桂荣, 梁秀芹, 马红芝. N型6H-SiCMOS电容的电学特性[J]. 半导体学报(英文版), 2001, 22(6): 755-759.
      Citation:
      王姝睿, 刘忠立, 梁桂荣, 梁秀芹, 马红芝. N型6H-SiCMOS电容的电学特性[J]. 半导体学报(英文版), 2001, 22(6): 755-759.
      shu

      • Received Date: 2015-08-20

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