Chin. J. Semicond. > 1984, Volume 5 > Issue 6 > 577-584

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高掺杂沟道GaAs M-I(10~2)-S Schottky势垒栅场效应晶体管(MIS SB FET)

周勉 and 王渭源

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(6): 577-584
      周勉, 王渭源. 高掺杂沟道GaAs M-I(10~2)-S Schottky势垒栅场效应晶体管(MIS SB FET)[J]. 半导体学报(英文版), 1984, 5(6): 577-584.
      Citation:
      周勉, 王渭源. 高掺杂沟道GaAs M-I(10~2)-S Schottky势垒栅场效应晶体管(MIS SB FET)[J]. 半导体学报(英文版), 1984, 5(6): 577-584.
      shu

      • Received Date: 2015-08-20

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