Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 970-973
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Development of Microwave SiGe Heterojunction Bipolar Transistors

贾宏勇 , 朱文斌 , 刘志农 , 陈培毅 and 钱佩信

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Key words: 晶体管

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 970-973
      贾宏勇, 朱文斌, 刘志农, 陈培毅, 钱佩信. Development of Microwave SiGe Heterojunction Bipolar Transistors[J]. 半导体学报(英文版), 2000, 21(10): 970-973.
      Citation:
      贾宏勇, 朱文斌, 刘志农, 陈培毅, 钱佩信. Development of Microwave SiGe Heterojunction Bipolar Transistors[J]. 半导体学报(英文版), 2000, 21(10): 970-973.
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      • Received Date: 2015-08-20

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