Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 974-978

Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

张伟 , 潘钟 , 李联合 , 王学宇 and 林耀望

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Key words: GaInNAs/GaAs

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Received: 20 August 2015 Revised: Online: Published: 01 October 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(10): 974-978

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(10): 974-978.

Citation:

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(10): 974-978.

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(10): 974-978.

Citation:

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(10): 974-978.

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