Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 979-983
|

CONTENTS

双层多孔硅结构上的UHV/CVD硅外延

王瑾 , 黄靖云 , 黄宜平 , 李爱珍 , 包宗明 , 竺士炀 and 叶志镇

+ Author Affiliations

PDF

Key words: 多孔硅, 超高真空化学气相淀积, 硅外延

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3111 Times PDF downloads: 1017 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 979-983
      王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. 半导体学报(英文版), 2000, 21(10): 979-983.
      Citation:
      王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. 半导体学报(英文版), 2000, 21(10): 979-983.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return