Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 979-983
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双层多孔硅结构上的UHV/CVD硅外延

王瑾 , 黄靖云 , 黄宜平 , 李爱珍 , 包宗明 , 竺士炀 and 叶志镇

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Key words: 多孔硅, 超高真空化学气相淀积, 硅外延

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 979-983
      王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. 半导体学报(英文版), 2000, 21(10): 979-983.
      Citation:
      王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. 半导体学报(英文版), 2000, 21(10): 979-983.
      shu

      • Received Date: 2015-08-20

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