Citation: |
Li Zehong, Wu Lijuan, Zhang Bo, Li Zhaoji. Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS[J]. Journal of Semiconductors, 2008, 29(11): 2153-2157.
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Li Z H, Wu L J, Zhang B, Li Z J. Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS[J]. J. Semicond., 2008, 29(11): 2153.
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Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS
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Abstract
A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed.The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance.The output characteristics become better as the drain-substrate parasitic capacitance decreases.Results show that the drain-substrate capacitance of the n-buried-pSOI sandwiched LDMOS is 46.6% less than that of the normal LDMOS,and 11.5% less than that of the n-buried-pSOI LDMOS,respectively.At 1dB compression point,its output power is 188% higher than that of the normal LDMOS,and 10.6% higher than that of the n-buried-pSOI LDMOS,respectively. The power-added efficiency of the proposed structure is 38.3%.The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS. -
References
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Proportional views