| Citation: |
Bi Jinshun, Song Limei, Hai Chaohe, Han Zhengsheng. Back-Gate Effect of SOI LDMOSFETs[J]. Journal of Semiconductors, 2008, 29(11): 2148-2152.
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Bi J S, Song L M, Hai C H, Han Z S. Back-Gate Effect of SOI LDMOSFETs[J]. J. Semicond., 2008, 29(11): 2148.
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Back-Gate Effect of SOI LDMOSFETs
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Abstract
0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs) with low barrier body contact (LBBC) and body tied to the source (BTS) were fabricated on silicon-on-insulator (SOI) substrates.The back-gate effects on front-channel subthreshold characteristics,on-resistance,and off-state breakdown characteristics of these devices are studied in detail.The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic back-channel leakage current.A model for the SOI LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.-
Keywords:
- SOI,
- LDMOSFET,
- back-gate effect
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References
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Proportional views
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