Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1154-1157
|

CONTENTS

采用非对称结构和注Ge的部分耗尽SOI nMOSFET的浮体效应(英文)

刘运龙 , 刘新宇 , 韩郑生 , 海潮和 and 钱鹤

+ Author Affiliations

PDF

Key words: SOInMOSFET, 浮体效应, 注Ge

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2176 Times PDF downloads: 1287 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1154-1157
      刘运龙, 刘新宇, 韩郑生, 海潮和, 钱鹤. 采用非对称结构和注Ge的部分耗尽SOI nMOSFET的浮体效应(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1154-1157.
      Citation:
      刘运龙, 刘新宇, 韩郑生, 海潮和, 钱鹤. 采用非对称结构和注Ge的部分耗尽SOI nMOSFET的浮体效应(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1154-1157.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return