Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1146-1153
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利用直接隧穿弛豫谱技术对超薄栅MOS结构中栅缺陷的研究(英文)

霍宗亮 , 杨国勇 , 许铭真 , 谭长华 and 段小蓉

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Key words: 隧穿, MOS器件, 比例差分算符

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1146-1153
      霍宗亮, 杨国勇, 许铭真, 谭长华, 段小蓉. 利用直接隧穿弛豫谱技术对超薄栅MOS结构中栅缺陷的研究(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1146-1153.
      Citation:
      霍宗亮, 杨国勇, 许铭真, 谭长华, 段小蓉. 利用直接隧穿弛豫谱技术对超薄栅MOS结构中栅缺陷的研究(英文)[J]. 半导体学报(英文版), 2002, 23(11): 1146-1153.
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      • Received Date: 2015-08-19

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