Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1159-1163
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6H-SiC肖特基源漏n沟MOSFET的数值-解析模型

汤晓燕 , 张义门 , 张玉明 , 郜锦侠 and 陈锐标

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Key words: 碳化硅, 肖特基势垒, MOSFET

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1159-1163
      汤晓燕, 张义门, 张玉明, 郜锦侠, 陈锐标. 6H-SiC肖特基源漏n沟MOSFET的数值-解析模型[J]. 半导体学报(英文版), 2004, 25(9): 1159-1163.
      Citation:
      汤晓燕, 张义门, 张玉明, 郜锦侠, 陈锐标. 6H-SiC肖特基源漏n沟MOSFET的数值-解析模型[J]. 半导体学报(英文版), 2004, 25(9): 1159-1163.
      shu

      • Received Date: 2015-08-19

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