Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1658-1661
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低能离子束沉积制备GaAs:Gd的研究

宋书林 , 陈诺夫 , 周剑平 , 尹志岗 , 李艳丽 , 杨少延 and 刘志凯

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Key words: GaAs∶Gd, X射线衍射, X光电子能谱

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1658-1661
      宋书林, 陈诺夫, 周剑平, 尹志岗, 李艳丽, 杨少延, 刘志凯. 低能离子束沉积制备GaAs:Gd的研究[J]. 半导体学报(英文版), 2004, 25(12): 1658-1661.
      Citation:
      宋书林, 陈诺夫, 周剑平, 尹志岗, 李艳丽, 杨少延, 刘志凯. 低能离子束沉积制备GaAs:Gd的研究[J]. 半导体学报(英文版), 2004, 25(12): 1658-1661.
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      • Received Date: 2015-08-19

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