Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1662-1665
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ZnO/SiC/Si(111)异质外延

朱俊杰 , 林碧霞 , 姚然 , 赵国亮 and 傅竹西

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Key words: 低压MOCVD, ZnO/SiC/Si, 结构特性, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1662-1665
      朱俊杰, 林碧霞, 姚然, 赵国亮, 傅竹西. ZnO/SiC/Si(111)异质外延[J]. 半导体学报(英文版), 2004, 25(12): 1662-1665.
      Citation:
      朱俊杰, 林碧霞, 姚然, 赵国亮, 傅竹西. ZnO/SiC/Si(111)异质外延[J]. 半导体学报(英文版), 2004, 25(12): 1662-1665.
      shu

      • Received Date: 2015-08-19

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