Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1666-1671
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用于SiGeHBT器件的UHV/CVDn~-型硅外延研究

黄文韬 , 陈长春 , 李希有 , 沈冠豪 , 张伟 , 刘志弘 , 陈培毅 and 钱佩信

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Key words: UHV/CVD, 硅外延, 杂质分布, SiGe, HBT

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1666-1671
      黄文韬, 陈长春, 李希有, 沈冠豪, 张伟, 刘志弘, 陈培毅, 钱佩信. 用于SiGeHBT器件的UHV/CVDn~-型硅外延研究[J]. 半导体学报(英文版), 2004, 25(12): 1666-1671.
      Citation:
      黄文韬, 陈长春, 李希有, 沈冠豪, 张伟, 刘志弘, 陈培毅, 钱佩信. 用于SiGeHBT器件的UHV/CVDn~-型硅外延研究[J]. 半导体学报(英文版), 2004, 25(12): 1666-1671.
      shu

      • Received Date: 2015-08-19

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