Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1041-1045
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掺铁浓度对半绝缘磷化铟的一些性质的影响(英文)

赵有文 , 罗以琳 , 冯汉源 , C D Beling and 林兰英

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Key words: 磷化铟, 半绝缘, 缺陷

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1041-1045
      赵有文, 罗以琳, 冯汉源, C D Beling, 林兰英. 掺铁浓度对半绝缘磷化铟的一些性质的影响(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1041-1045.
      Citation:
      赵有文, 罗以琳, 冯汉源, C D Beling, 林兰英. 掺铁浓度对半绝缘磷化铟的一些性质的影响(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1041-1045.
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      • Received Date: 2015-08-19

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