Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 1005-1009
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pMOS器件的热载流子注入和负偏压温度耦合效应

刘红侠 and 郝跃

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Key words: pMOS器件, 热载流子注入, 负偏压温度不稳定性, 界面态, 氧化层固定正电荷

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 1005-1009
      刘红侠, 郝跃. pMOS器件的热载流子注入和负偏压温度耦合效应[J]. 半导体学报(英文版), 2005, 26(5): 1005-1009.
      Citation:
      刘红侠, 郝跃. pMOS器件的热载流子注入和负偏压温度耦合效应[J]. 半导体学报(英文版), 2005, 26(5): 1005-1009.
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      • Received Date: 2015-08-19

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