Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 999-1004
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恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性

王彦刚 , 许铭真 , 谭长华 and 段小蓉

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Key words: 衬底电流, 软击穿, 超薄栅氧化层, 威布尔分布, 变频光泵效应

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 999-1004
      王彦刚, 许铭真, 谭长华, 段小蓉. 恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性[J]. 半导体学报(英文版), 2005, 26(5): 999-1004.
      Citation:
      王彦刚, 许铭真, 谭长华, 段小蓉. 恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性[J]. 半导体学报(英文版), 2005, 26(5): 999-1004.
      shu

      • Received Date: 2015-08-19

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