Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 700-705
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新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距的优化(英文)

何进 , 张兴 , 黄如 and 王阳元

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Key words: 场限环, 击穿电压, 峰值电场, 环间距

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 700-705
      何进, 张兴, 黄如, 王阳元. 新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距的优化(英文)[J]. 半导体学报(英文版), 2001, 22(6): 700-705.
      Citation:
      何进, 张兴, 黄如, 王阳元. 新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距的优化(英文)[J]. 半导体学报(英文版), 2001, 22(6): 700-705.
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      • Received Date: 2015-08-20

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