Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 695-699
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快速退火对SiGe/Si多量子阱p-i-n光电二极管的影响(英文)

李成 , 杨沁清 , 王红杰 , 王玉田 , 余金中 and 王启明

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Key words: SiGe/Si多量子阱, 光电二极管, 蓝移, 热处理, 扩散

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 695-699
      李成, 杨沁清, 王红杰, 王玉田, 余金中, 王启明. 快速退火对SiGe/Si多量子阱p-i-n光电二极管的影响(英文)[J]. 半导体学报(英文版), 2001, 22(6): 695-699.
      Citation:
      李成, 杨沁清, 王红杰, 王玉田, 余金中, 王启明. 快速退火对SiGe/Si多量子阱p-i-n光电二极管的影响(英文)[J]. 半导体学报(英文版), 2001, 22(6): 695-699.
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      • Received Date: 2015-08-20

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