Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 689-694
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固相反应制备的多晶和外延CoSi_2/n-Si(111)接触的肖特基特性(英文)

竺士炀 , 茹国平 , 屈新萍 and 李炳宗

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Key words: 肖特基势垒, 硅化物, I-V/C-V, 不均匀性

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 689-694
      竺士炀, 茹国平, 屈新萍, 李炳宗. 固相反应制备的多晶和外延CoSi_2/n-Si(111)接触的肖特基特性(英文)[J]. 半导体学报(英文版), 2001, 22(6): 689-694.
      Citation:
      竺士炀, 茹国平, 屈新萍, 李炳宗. 固相反应制备的多晶和外延CoSi_2/n-Si(111)接触的肖特基特性(英文)[J]. 半导体学报(英文版), 2001, 22(6): 689-694.
      shu

      • Received Date: 2015-08-20

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