Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 684-688
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快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文)

魏永强 , 刘会云 , 徐波 , 丁鼎 , 梁基本 and 王占国

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Key words: InAs/GaAs量子点, InGaAs盖层, 快速热退火

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 684-688
      魏永强, 刘会云, 徐波, 丁鼎, 梁基本, 王占国. 快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文)[J]. 半导体学报(英文版), 2001, 22(6): 684-688.
      Citation:
      魏永强, 刘会云, 徐波, 丁鼎, 梁基本, 王占国. 快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文)[J]. 半导体学报(英文版), 2001, 22(6): 684-688.
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      • Received Date: 2015-08-20

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