Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 323-325
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高温退火对GDa-Si_xC_(1-x):H薄膜晶化特性的影响

张仿清 , 张南屏 , 余光明 , 汤训虎 and 陈光华

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 323-325
      张仿清, 张南屏, 余光明, 汤训虎, 陈光华. 高温退火对GDa-Si_xC_(1-x):H薄膜晶化特性的影响[J]. 半导体学报(英文版), 1985, 6(3): 323-325.
      Citation:
      张仿清, 张南屏, 余光明, 汤训虎, 陈光华. 高温退火对GDa-Si_xC_(1-x):H薄膜晶化特性的影响[J]. 半导体学报(英文版), 1985, 6(3): 323-325.
      shu

      • Received Date: 2015-08-20

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