Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1097-1103
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不同HALO掺杂剂量的超薄栅pMOSFET的退化(英文)

赵要 , 胡靖 , 许铭真 and 谭长华

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Key words: 热载流子, pMOS器件, HALO结构, 退化

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1097-1103
      赵要, 胡靖, 许铭真, 谭长华. 不同HALO掺杂剂量的超薄栅pMOSFET的退化(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1097-1103.
      Citation:
      赵要, 胡靖, 许铭真, 谭长华. 不同HALO掺杂剂量的超薄栅pMOSFET的退化(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1097-1103.
      shu

      • Received Date: 2015-08-19

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