Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1104-1108
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直拉硅单晶中位错的光致发光

李东升 , 杨德仁 and S Pizzini

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Key words: 位错, 氧沉淀, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1104-1108
      李东升, 杨德仁, S Pizzini. 直拉硅单晶中位错的光致发光[J]. 半导体学报(英文版), 2004, 25(9): 1104-1108.
      Citation:
      李东升, 杨德仁, S Pizzini. 直拉硅单晶中位错的光致发光[J]. 半导体学报(英文版), 2004, 25(9): 1104-1108.
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      • Received Date: 2015-08-19

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