Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 821-825
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旁栅效应对GaAs MESFET数字IC设计的影响

张有涛 , 夏冠群 , 李拂晓 , 高建峰 and 杨乃彬

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Key words: 旁栅效应, GaAs MESFET, 阈值电压, 缺陷陷阱, 集成度

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 821-825
      张有涛, 夏冠群, 李拂晓, 高建峰, 杨乃彬. 旁栅效应对GaAs MESFET数字IC设计的影响[J]. 半导体学报(英文版), 2005, 26(4): 821-825.
      Citation:
      张有涛, 夏冠群, 李拂晓, 高建峰, 杨乃彬. 旁栅效应对GaAs MESFET数字IC设计的影响[J]. 半导体学报(英文版), 2005, 26(4): 821-825.
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      • Received Date: 2015-08-19

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