Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 826-829
|

CONTENTS

1V电源的CMOS能隙电压基准源

盛敬刚 , 陈志良 and 石秉学

+ Author Affiliations

PDF

Key words: 低压, 能隙基准源, CMOS模拟电路

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2534 Times PDF downloads: 3316 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 826-829
      盛敬刚, 陈志良, 石秉学. 1V电源的CMOS能隙电压基准源[J]. 半导体学报(英文版), 2005, 26(4): 826-829.
      Citation:
      盛敬刚, 陈志良, 石秉学. 1V电源的CMOS能隙电压基准源[J]. 半导体学报(英文版), 2005, 26(4): 826-829.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return