A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

Lu Shengli; Sun Zhilin; Sun Weifeng; Shi Longxing

Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2286-2289

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A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

Lu Shengli, Sun Zhilin, Sun Weifeng and Shi Longxing

+ Author Affiliations

Abstract: As the thickness of an SOI layer varies,a minimum breakdown voltage is reached when the thickness is about 2μm.The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant.The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion.In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

Key words: SOI, vertically linearly graded concentration, breakdown voltage, LDMOS

1	Universal trench design method for a high-voltage SOI trench LDMOS Hu Xiarong, Zhang Bo, Luo Xiaorong, Li Zhaoji Journal of Semiconductors, 2012, 33(7): 074006. doi: 10.1088/1674-4926/33/7/074006
2	ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR Jiang Lingli, Zhang Bo, Fan Hang, Qiao Ming, Li Zhaoji, et al. Journal of Semiconductors, 2011, 32(9): 094002. doi: 10.1088/1674-4926/32/9/094002
3	Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage Wang Wenlian, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2011, 32(2): 024002. doi: 10.1088/1674-4926/32/2/024002
4	A new integrated SOI power device based on self-isolation technology Gao Huanmei, Luo Xiaorong, Zhang Wei, Deng Hao, Lei Tianfei, et al. Journal of Semiconductors, 2010, 31(8): 084012. doi: 10.1088/1674-4926/31/8/084012
5	Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer Cheng Jianbing, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2008, 29(2): 344-347.
6	Total Ionizing Dose Radiation Effects of RF PDSOI LDMOS Transistors Liu Mengxin, Han Zhengsheng, Bi Jinshun, Fan Xuemei, Liu Gang, et al. Journal of Semiconductors, 2008, 29(11): 2158-2163.
7	Modeling of High-Voltage LDMOS for PDP Driver ICs Li Haisong, Sun Weifeng, Yi Yangbo, Shi Longxing Journal of Semiconductors, 2008, 29(11): 2110-2114.
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10	Dual Material Gate SOI MOSFET with a Single Halo Li Zunchao, Jiang Yaolin, Wu Jianmin Chinese Journal of Semiconductors , 2007, 28(3): 327-331.
11	A Novel Double RESURF TG-LDMOS Device Structure Xu Shengrui, Hao Yue, Feng Hui, Li Dechang, Zhang Jincheng, et al. Chinese Journal of Semiconductors , 2007, 28(2): 232-236.
12	Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection Qiao Ming, Zhou Xianda, Duan Mingwei, Fang Jian, Zhang Bo, et al. Chinese Journal of Semiconductors , 2007, 28(9): 1428-1432.
13	Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer Chen Wanjun, Zhang Bo, Li Zhaoji Chinese Journal of Semiconductors , 2007, 28(3): 355-360.
14	A Continuous and Analytical Surface Potential Model for SOI LDMOS Xu Wenjie, Sun Lingling, Liu Jun, Li Wenjun, Zhang Haipeng, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1712-1716.
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16	A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer Luo Xiaorong, Li Zhaoji, Zhang Bo Chinese Journal of Semiconductors , 2006, 27(10): 1832-1837.
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18	SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng, et al. Chinese Journal of Semiconductors , 2006, 27(5): 796-803.
19	Optimization of Breakdown Voltage and On-Resistance Based on the Analysisof the Boundary Curvature of the Drain Region in RF RESURF LDMOS Chi Yaqing, Hao Yue, Feng Hui, Fang Liang Chinese Journal of Semiconductors , 2006, 27(10): 1818-1822.
20	Breakdown Voltage Analysis of a REBULF LDMOS Structurewith an n+-Floating Layer Zhang Bo, Duan Baoxing, Li Zhaoji Chinese Journal of Semiconductors , 2006, 27(4): 730-734.

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Received: 19 August 2015 Revised: Online: Published: 01 December 2005

As the thickness of an SOI layer varies,a minimum breakdown voltage is reached when the thickness is about 2μm.The vertical electric field of the SOI LDMOS with a drift region which is vertically linearly graded is constant.The vertically linearly graded concentration drift can be achieved by impurity implanting followed by thermal diffusion.In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

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