Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 765-769
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超薄栅MOS结构恒压应力下的直接隧穿弛豫谱

卫建林 , 毛凌锋 , 许铭真 and 谭长华

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Key words: 直接隧穿, 超薄栅氧化层, 陷阱参数, 可靠性

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 765-769
      卫建林, 毛凌锋, 许铭真, 谭长华. 超薄栅MOS结构恒压应力下的直接隧穿弛豫谱[J]. 半导体学报(英文版), 2001, 22(6): 765-769.
      Citation:
      卫建林, 毛凌锋, 许铭真, 谭长华. 超薄栅MOS结构恒压应力下的直接隧穿弛豫谱[J]. 半导体学报(英文版), 2001, 22(6): 765-769.
      shu

      • Received Date: 2015-08-20

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