Chin. J. Semicond. > 2001, Volume 22 > Issue 6 > 770-773
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深亚微米MOS器件的热载流子效应

刘红侠 , 郝跃 and 孙志

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Key words: 深亚微米, MOS器件, 热载流子效应, 可靠性

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(6): 770-773
      刘红侠, 郝跃, 孙志. 深亚微米MOS器件的热载流子效应[J]. 半导体学报(英文版), 2001, 22(6): 770-773.
      Citation:
      刘红侠, 郝跃, 孙志. 深亚微米MOS器件的热载流子效应[J]. 半导体学报(英文版), 2001, 22(6): 770-773.
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      • Received Date: 2015-08-20

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