Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1137-1142
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Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管

陈效建 , 吴旭 , 李拂晓 and 焦刚

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Key words: MHEMT, 增强型, Pt基埋栅势垒, 稳定性

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1137-1142
      陈效建, 吴旭, 李拂晓, 焦刚. Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J]. 半导体学报(英文版), 2004, 25(9): 1137-1142.
      Citation:
      陈效建, 吴旭, 李拂晓, 焦刚. Pt基埋栅势垒GaAs基增强型InAlAs/InGaAs改性高电子迁移率晶体管[J]. 半导体学报(英文版), 2004, 25(9): 1137-1142.
      shu

      • Received Date: 2015-08-19

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