Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1132-1136
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4H-SiC功率MESFET的击穿特性

吕红亮 , 张义门 , 张玉明 and 杨林安

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Key words: SiC, 击穿特性, 金属半导体场效应晶体管

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1132-1136
      吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.
      Citation:
      吕红亮, 张义门, 张玉明, 杨林安. 4H-SiC功率MESFET的击穿特性[J]. 半导体学报(英文版), 2004, 25(9): 1132-1136.
      shu

      • Received Date: 2015-08-19

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