Chin. J. Semicond. > 1996, Volume 17 > Issue 12 > 902-906
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MOS器件“鸟嘴区”电学特性研究

戚盛勇，金晓冬

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(12): 902-906
      戚盛勇，金晓冬. MOS器件“鸟嘴区”电学特性研究[J]. 半导体学报(英文版), 1996, 17(12): 902-906.
      Citation:
      戚盛勇，金晓冬. MOS器件“鸟嘴区”电学特性研究[J]. 半导体学报(英文版), 1996, 17(12): 902-906.
      shu

      • Received Date: 2015-08-18

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