Chin. J. Semicond. > 2004, Volume 25 > Issue 12 > 1639-1646
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GaN-MOCVD设备反应室流场的CFD数值仿真

刘奕 , 陈海昕 and 符松

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Key words: CFD, GaN, MOCVD, 数值仿真

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(12): 1639-1646
      刘奕, 陈海昕, 符松. GaN-MOCVD设备反应室流场的CFD数值仿真[J]. 半导体学报(英文版), 2004, 25(12): 1639-1646.
      Citation:
      刘奕, 陈海昕, 符松. GaN-MOCVD设备反应室流场的CFD数值仿真[J]. 半导体学报(英文版), 2004, 25(12): 1639-1646.
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      • Received Date: 2015-08-19

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