Citation: |
Peng Yinqiao, Zhou Jicheng, Long Sirui, Zhou Hongguang. NiCr Nanometer thin film for pressure sensors[J]. Journal of Semiconductors, 2003, 24(S1): 91-93.
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Peng Y Q, Zhou J C, Long S R, Zhou H G. NiCr Nanometer thin film for pressure sensors[J]. Chin. J. Semicond., 2003, 24(S1): 91.
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NiCr Nanometer thin film for pressure sensors
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Abstract
Nanometer thin film strain resistance is manufactured directly on the metallic elastic substrate by ion-beam sputtering technology and semiconductor micro-machining technology, Which achieve atomic union betWeen sensitive element and elastic substrate. This effectively solves the technical problem about Nzero drift H of the traditional pressure sensors, and makes pressure sensors be stable and reliable for long-term on condition of harsh environment, such as high temperature and vibration and so on. -
References
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