Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 735-739
|

CONTENTS

MOCVD生长GaN材料的模拟

郭文平 , 邵嘉平 , 罗毅 , 孙长征 , 郝智彪 and 韩彦军

+ Author Affiliations

PDF

Key words: GaN, MOCVD, 计算流体力学, 模拟, 局域Ⅴ/Ⅲ比

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2740 Times PDF downloads: 2796 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 735-739
      郭文平, 邵嘉平, 罗毅, 孙长征, 郝智彪, 韩彦军. MOCVD生长GaN材料的模拟[J]. 半导体学报(英文版), 2005, 26(4): 735-739.
      Citation:
      郭文平, 邵嘉平, 罗毅, 孙长征, 郝智彪, 韩彦军. MOCVD生长GaN材料的模拟[J]. 半导体学报(英文版), 2005, 26(4): 735-739.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return